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| Ordering number : ENN6794 CPH6311 P-Channel Silicon MOSFET CPH6311 Ultrahigh-Speed Switching Applications Preliminary Features * * * Package Dimensions unit : mm 2151A [CPH6311] 0.15 Low ON-state resistance. Ultrahigh-speed switching. 2.5V drive. 6 5 4 0.6 0.05 1.6 2.8 1 2 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions 0.4 0.7 0.9 0.2 3 0.95 0.6 Ratings -20 10 --5 -20 1.6 2.0 150 --55 to +150 0.2 2.9 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Unit V V A A W W C C Mounted on a ceramic board (900mm2!0.8mm) Mounted on a FR4 board PW5S Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=-1mA, VGS=0 VDS=-20V, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--3A ID=-3A, VGS=--4.5V -1A, VGS=--2.5V ID=Ratings min --20 typ max --1 10 --1.4 8.5 32 46 42 60 Unit V A A V S m m --0.4 5.8 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2500 TS IM TA-3168 No.6794-1/4 CPH6311 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Marking : JM Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=-10V, VGS=--10V, ID=--5A VDS=-10V, VGS=--10V, ID=--5A VDS=-10V, VGS=--10V, ID=--5A IS=-5A, VGS=0 Ratings min typ 1230 200 170 17 100 100 95 31 2.8 4.2 --0.83 max Unit pF pF pF ns ns ns ns nC nC nC -1.5 V Switching Time Test Circuit VDD= --10V 0V --4.5V VIN VIN ID= --3A RL=3.3 PW=10s D.C.1% D G VOUT P.G 50 S CPH6311 --6 ID -- VDS --4.0V --3.5 --8 ID -- VGS VDS= --10V V --3.0V --2.5V --1.5V Drain Current, ID -- A --2. 0 V --7 --6 --5 --4 --3 --2 --1 --5 Drain Current, ID -- A --4 --3 --4.5V Ta= 7 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 VGS= --1.0V --0.7 --0.8 --0.9 --1.0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 Drain-to-Source Voltage, VDS -- V 140 IT02276 140 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V --25 --1 C IT02277 100 120 140 RDS(on) -- Ta Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 120 Static Drain-to-Source On-State Resistance, RDS(on) -- m 120 100 100 --3.0A 80 80 60 ID= --1.0A 60 40 40 --2.5V , V GS= = --1.0A ID --4.5V A, V GS= I D= --3.0 20 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 20 0 --60 --40 --20 0 20 40 60 80 25 C --2 5C 160 Gate-to-Source Voltage, VGS -- V IT02278 Ambient Temperature, Ta -- C IT02279 No.6794-2/4 CPH6311 Forward Transfer Admittance, yfs -- S 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT02280 10000 7 5 yfs -- ID VDS= --10V --10 7 5 3 2 IF -- VSD VGS=0 Forward Current, IF -- A Ta= 7 5C --2 Ta= 75C 5C C 25 --1.0 7 5 3 2 --0.1 7 5 3 2 25 C --0.01 7 5 3 2 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --0.001 Drain Current, ID -- A 1000 7 5 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V --25 C IT02281 VDD= --10V VGS= --4.5V Ciss, Coss, Crss -- pF td(off) Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.1 2 3 5 3 2 tf tr Ciss 1000 7 5 3 2 td(on) Coss Crss 100 7 --1.0 2 3 5 7 --10 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Drain Current, ID -- A --10 --9 IT02282 --100 7 5 3 2 VGS -- Qg Drain-to-Source Voltage, VDS -- V IT02283 ASO Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --5A Drain Current, ID -- A IDP= --20A ID= --5A --8 --7 --6 --5 --4 --3 --2 --1 0 0 5 10 15 20 25 30 35 IT02284 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 <10s 1m 100s s 10 ms 10 0m s DC op Operation in era tio this area is n limited by RDS(on). --0.01 --0.01 2 3 Ta=25C Single pulse Mounted on a ceramic board(900mm2!0.8mm) 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 23 Total Gate Charge, Qg -- nC 2.0 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V 2.5 5 7--100 IT02285 PD -- Ta Allowable Power Dissipation, PD -- W 1.6 1.5 M 2.0 ou nt ed on M 1.5 ac ou er nt ed 1.0 am ic on bo aF ar R4 d( 90 1.0 bo 0m ar 0.5 m2 !0 dP W 5 .8m S m 0.5 ) 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT02286 Ambient Temperature, Ta -- C IT02642 No.6794-3/4 CPH6311 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2000. Specifications and information herein are subject to change without notice. PS No.6794-4/4 |
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